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MTB20N06FP - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Insulating package, front/back side insulating voltage=2500V(AC).
  • RoHS compliant package Symbol MTB20N06FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTB20N06FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant.

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Datasheet Details

Part number MTB20N06FP
Manufacturer CYStech
File Size 375.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB20N06FP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C132FP Issued Date : 2015.05.04 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB20N06FP BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=4.5V, ID=20A 60V 27A 18.3mΩ 21.
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