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MTB050N15BRH8 - N-Channel Power MOSFET

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=3.4A VGS=4.5V, ID=3.3A 150V 16A 4.2A 45mΩ 50mΩ Symbol MTB050N15BRH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB050N15BRH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free pa.

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Datasheet Details

Part number MTB050N15BRH8
Manufacturer CYStech
File Size 833.73 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MTB050N15BRH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2018.03.09 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB050N15BRH8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=3.4A VGS=4.5V, ID=3.3A 150V 16A 4.
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