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BTD882NUJ3 - Low Vcesat NPN Epitaxial Planar Transistor

Features

  • Low VCE(sat), 0.2V typ. at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB772NUJ3.
  • Pb-free lead plating and halogen-free package Symbol BTD882NUJ3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter BCE Ordering Information Device BTD882NUJ3-P-T3-G Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compou.

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Datasheet Details

Part number BTD882NUJ3
Manufacturer CYStech
File Size 330.65 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD882NUJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. BTD882NUJ3Low Vcesat NPN Epitaxial Planar Transistor BVCEO IC Spec. No. : C630T3 Issued Date : 2017.10.06 Revised Date : Page No. : 1/7 30V 3A Features • Low VCE(sat), 0.2V typ. at IC / IB = 2A / 0.
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