Datasheet4U Logo Datasheet4U.com

MTP452L3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Simple Drive Requirement.
  • Low On-resistance.
  • Fast switching Characteristic.
  • Pb-free lead plating package BVDSS RDSON(MAX) ID -30V 55mΩ -6A Symbol MTP452L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor O.

📥 Download Datasheet

Datasheet Details

Part number MTP452L3
Manufacturer CYStech Electronics
File Size 395.75 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTP452L3 Datasheet

📁 Similar Datasheet

  • MTP45N05E - Power MOSFET (Motorola)
  • MTP40008 - Three-Phase Bridge Rectifier (nELL)
  • MTP40010 - Three-Phase Bridge Rectifier (nELL)
  • MTP40012 - Three-Phase Bridge Rectifier (nELL)
  • MTP40016 - Three-Phase Bridge Rectifier (nELL)
  • MTP40018 - Three-Phase Bridge Rectifier (nELL)
  • MTP40N10E - TMOS POWER FET (Motorola)
  • MTP40N10E - Power MOSFET (ON Semiconductor)
  • MTP4N08 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • MTP4N10 - N-Channel Power MOSFET (Fairchild Semiconductor)
Other Datasheets by CYStech Electronics
  • MTP452M3 - 30V P-CHANNEL Enhancement Mode MOSFET
  • MTP405CJ3 - P-Channel Enhancement Mode Power MOSFET
  • MTP425I3 - P-Channel Enhancement Mode Power MOSFET
  • MTP425J3 - P-Channel Enhancement Mode Power MOSFET
  • MTP4403Q8 - P-Channel Enhancement Mode Power MOSFET
  • MTP4403SQ8 - P-Channel Enhancement Mode Power MOSFET
  • MTP4409H8 - P-Channel Enhancement Mode Power MOSFET
  • MTP4409Q8 - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C400L3 Issued Date : 2009.06.22 Revised Date : Page No. : 1/7 MTP452L3 Features • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS RDSON(MAX) ID -30V 55mΩ -6A Symbol MTP452L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-ambient, max Note : *1.
Published: |