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MTN4N65CE3 - N-Channel Enhancement Mode Power MOSFET

Description

The MTN4N65CE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications.

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet Details

Part number MTN4N65CE3
Manufacturer CYStech Electronics
File Size 365.07 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N65CE3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C080E3 Issued Date : 2016.09.13 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN4N65CE3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=2A 650V 4.2A 2.6A 1.7Ω(typ) Description The MTN4N65CE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications.
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