MBNP2074G6 - N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device

Product Overview

CYStech Electronics

Datasheet Details

Part number	MBNP2074G6
Manufacturer	CYStech Electronics
File Size	268.71 KB
Description	N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device
Datasheet	MBNP2074G6 Datasheet
Additional preview pages of the MBNP2074G6 datasheet.

Product details

Description

The MBNP2074G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

Simple drive requirement.
Low gate charge.
Low on-resistance.
Fast switching speed.
Pb-free package Equivalent Circuit MBNP2074G6 Outline TSOP-6 C2 S1 D1 G：Gate B : Base S：Source E : Emitter D：Drain C : Collector B2 E2 G1 MBNP2074G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C196G6 Issued Date : 2011.01.20 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage G.

📁 Similar Datasheet

MBN1200D25B - Silicon N-Channel IGBT (Hitachi)
MBN1200D33A - Silicon N-Channel IGBT (Hitachi)
MBN1200GS12AW - Silicon N-Channel IGBT (Hitachi)
MBN400A6 - IGBT Module Range (Hitachi)
MBN400C20 - IGBT Module / Silicon N Channel IGBT (Hitachi)
MBN400C33A - IGBT Module / Silicon N Channel IGBT (Hitachi)
MBN400GR12 - IGBT Module (Hitachi)
MBN400GR12AW - IGBT Module (Hitachi)

Other Datasheets by CYStech Electronics

MBNP2026G6 - N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device
MBNP01Q40Q8 - Complex Transistors

Published: Jun 23, 2016 |