CTL0422PS-R3 Datasheet (CT Micro)

CTL0422PS-R3, P-Channel MOSFET

The CTL0422PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application su

CTL0422PS-R3 Features

* Drain-Source Breakdown Voltage VDSS -20 V

* Drain-Source On-Resistance RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A

* Continuous Drain Current at TC=25℃ID = -4.0A

* Advanced high cell density Trench Technology