CT3401-R3 Datasheet (CT Micro)

CT3401-R3, P-Channel MOSFET

The CT3401-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application.

Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CT3401-R3 P-Chann

CT3401-R3 Features

* Drain-Source Breakdown Voltage VDSS - 30 V

* Drain-Source On-Resistance RDS(ON) 53mΩ, at VGS= - 10V, IDS= - 4.1A RDS(ON) 64mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 86mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃

* Continuous Drain Current at TA=25 ID = - 4.1A

* Advanced high cell