UGF18060 Datasheet (CREE) - Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF18060, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz.

Rated with a minimum output power of 60W.

It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.

ALL GOLD metal system for highest reliability Industry standard package Suggested alternative to the MRF18060 Internally matched for repeatable manu