Description
The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
Features
- RDS(ON) = 1.75 Ω@VGS = 10 V.
- Low gate charge ( typical 27nC).
- High ruggedness.
- Fast switching capability.
- Avalanche energy specified.
- Improved dv/dt capability.
- Symbol
CFF/P8N80.
- Ordering Information
Order Number
Normal
Lead Free Plating
HX8N80(C)-TA3-T
HX8N80(C)L-TA3-T
HX8N80(C)-TF3-T
HX8N80(C)L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
HX8N80(C)L-TA3-T
（1）Packing Type （2）Package Type
（3）Lead Plating
Package
TO-220 TO-220F
Pin Assi.
CFP8N80-CRE.pdf
