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HGP065NE4A - Silicon N-Channel Power MOSFET

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Datasheet Details

Part number HGP065NE4A
Manufacturer CR Micro
File Size 850.17 KB
Description Silicon N-Channel Power MOSFET
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HGP065NE4A Product details

Description

HGP065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is TO-220AB, which accords with the RoHS standard.

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