Datasheet Details
| Part number | HGE055NE4A |
|---|---|
| Manufacturer | CR Micro |
| File Size | 673.32 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 HGE055NE4A-CRMicro.pdf
|
| Part number | HGE055NE4A |
|---|---|
| Manufacturer | CR Micro |
| File Size | 673.32 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
HGE055NE4A-CRMicro.pdf
|
VDSS 45 V HGE055NE4A, the silicon N-channel Enhanced ID 18 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 3.1 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 4.4 mΩ performance and enhance the avalanche energy.The transistor RDS(ON) Typ@Vgs=4.5V 6.5 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOP8, which accords with the RoHS standard.
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