HGD10N04A - Silicon N-Channel Power MOSFET

CR Micro

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Datasheet Details

Part number	HGD10N04A
Manufacturer	CR Micro
File Size	698.44 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HGD10N04A-CRMicro.pdf

HGD10N04A Product details

Description

VDSS ID（Silicon limited current） HGD10N04A, the silicon N-channel Enhanced VDMOSFETs, is ID（Package limited） obtained by the high density Trench technology which reduce the PD conduction loss, improve switching performance and enhance the avalanche energy.This device is suitable for use as A load switch and RDS(ON)Typ PWM applications.the package form is TO-252, which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.

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Published: Dec 8, 2024 |