CS3N80A3H1-G - Silicon N-Channel Power MOSFET

CR Micro

CS3N80A3H1-G Datasheet Preview — Preview of CS3N80A3H1-G PDF

Datasheet Details

Part number	CS3N80A3H1-G
Manufacturer	CR Micro
File Size	773.60 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS3N80A3H1-G-CRMicro.pdf

CS3N80A3H1-G Product details

Description

CS3N80 A3H1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤4.8Ω).
Low Gate Charge (Typical Data:18nC).
Low Reverse transfer capacitances(Typical:7pF).
100% Single Pulse avalanche energy Test.
Halogen Free.

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Published: Dec 9, 2024 |