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Silicon N-Channel Power MOSFET
○R
CS300N04 AR
General Description：
CS300N04 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ
40 V 300 A 120 A 271.7 W 1.6 mΩ
suitable for use as a load switch and PWM applications. The
package form is TO-262, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤2.
CS300N04AR Datasheet
