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Silicon N-Channel Power MOSFET
○R
CS300N04 A8
General Description：
CS300N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤2.
CS300N04A8 Datasheet
