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Silicon N-Channel Power MOSFET
○R
CS18N20 A4R
General Description：
CS18N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
200
V
18
A
100
W
0.12
Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system miniaturization and higher efficiency. The package
form is TO-252, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:20.4nC) l Low Reverse transfer capacitances(Typical:16.4pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS18N20A4R Datasheet
