CS18N20A4R Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS18N20A4R, Silicon N-Channel Power MOSFET

CS18N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 200 V 18 A 100 W 0.12 Ω performance and enhance the avalanche energy.

The transistor can be used in v

CS18N20A4R Features

* l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:20.4nC) l Low Reverse transfer capacitances(Typical:16.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P