CS17N10A4-G - Silicon N-Channel Power MOSFET

CR Micro

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Datasheet Details

Part number	CS17N10A4-G
Manufacturer	CR Micro
File Size	507.34 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS17N10A4-G-CRMicro.pdf

CS17N10A4-G Product details

Description

CS17N10 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is TO-252, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤67 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free.

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Published: Dec 8, 2024 |