CS16N06AE-G - Silicon N-Channel Power MOSFET

CR Micro

CS16N06AE-G Datasheet Preview — Preview of CS16N06AE-G PDF

Datasheet Details

Part number	CS16N06AE-G
Manufacturer	CR Micro
File Size	1.26 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS16N06AE-G-CRMicro.pdf

CS16N06AE-G Product details

Description

CS16N06 AE-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOP8, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data: 88.8nC) l Low Reverse transfer capacitances(Typical:220pF) l 100% Single Pulse avalanche energy Test l Halogen free.

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Published: Dec 8, 2024 |