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Silicon N-Channel Power MOSFET
○R
CS120N10 AR
General Description：
CS120N10 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard.
Features：
VDSS ID PD(TC=25℃) RDS(ON)Typ
100
V
120
A
198 W 7.5 mΩ
l Fast Switching l Low ON Resistance(Rdson≤9.5mΩ) l Low Gate Charge (Typical Data:108nC) l Low Reverse transfer capacitances(Typical:311pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS120N10AR Datasheet
