CRTD080P04L2P - Silicon N-Channel Power MOSFET

CR Micro

CRTD080P04L2P Datasheet Preview — Preview of CRTD080P04L2P PDF

Datasheet Details

Part number	CRTD080P04L2P
Manufacturer	CR Micro
File Size	797.36 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CRTD080P04L2P-CRMicro.pdf

CRTD080P04L2P Product details

Description

CRTD080P04L2P, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is TO-252, which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤8 mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.
Halogen Free.

📁 CRTD080P04L2P Similar Datasheet

CRTD360N10LZ - Trench N-MOSFET (CRM)
CRTD370P10L - Trench P-MOSFET (CRM)
CRT-40 - Latching SPDT Coaxial Switch (Teledyne)
CRT0402 - Thin Film Precision Chip Resistors (BOURNS)
CRT0402-AS - Sulfur-Resistant Thin Film Precision Chip Resistors (BOURNS)
CRT0402-ST - Thin Film Precision Chip Resistors (BOURNS)
CRT0402A - Thin Film Precision Chip Resistors (BOURNS)
CRT0603 - Thin Film Precision Chip Resistors (BOURNS)

Other Datasheets by CR Micro

CRTD080N02U2-G - Silicon N-Channel Power MOSFET
CRTD080N04L2-G - Silicon N-Channel Power MOSFET
CRTD084N08N - Trench N-MOSFET
CRTD085N06N2-G - Trench N-MOSFET
CRTD019N03L2-G - Silicon N-Channel Power MOSFET
CRTD028N03L2-G - Silicon N-Channel Power MOSFET

Published: Dec 9, 2024 |