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CRTB360N06L-G - Silicon N-Channel Power MOSFET

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Datasheet Details

Part number CRTB360N06L-G
Manufacturer CR Micro
File Size 1.24 MB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CRTB360N06L-G-CRMicro.pdf

CRTB360N06L-G Product details

Description

VDSS 60 V CRTB360N06L-G, the silicon N-channel Enhanced ID 7 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 2.6 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 26 mΩ performance and enhance the avalanche energy.The transistor RDS(ON) Typ@Vgs=4.5V 31 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-223, which accords with the Halogen Free standard.

Features

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