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Silicon FS Trench IGBT CRG25T120BKR3S
General Description:
Using CRM's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness.
Features:
Trench FS Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), typ =1.95V
@ IC =25A Extremely enhanced avalanche capability
VCES IC Ptot (TC=25℃)
VCE(SAT)
TO-247
1200 V
25
A
208 W
1.95 V
Applications:
Power switch circuit of induction cooker(IH).