MSL049P03G - P-Channel Enhancement Mode MOSFET

CITC

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Datasheet Details

Part number	MSL049P03G
Manufacturer	CITC
File Size	711.77 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	MSL049P03G-CITC.pdf

MSL049P03G Product details

Description

DDDD Top View of SOP-8 ( 5,6,7,8 ) D D DD SSSG (4) G SSS (1, 2, 3) P- Channel MOSFET Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Pulsed Drain Current(Note:1) Gate-Source Voltage VGS =-10V Diode Continuous Forward Current(Note:1) Avalanche Current, single pulse (Note:2) L=0.5mH L=1mH Avalanche Energy, single pulse (Note:2) L=0.5mH L=1mH Thermal Resistance

Features

s.
-30V/-23.8A RDS(ON) = 4.9mΩ (max. ) @ VGS= -10V RDS(ON) = 8.2mΩ (max. ) @ VGS= -4.5V.
Super high dense cell design.
Reliable and Rugged.
Lead free and green device available (RoHS compliant).
HBM ESD protection level pass 8KV. Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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Published: Mar 13, 2018 |