Description
DDDD
SS SG
PIN 1
DFN3.3x3.3-8(Saw-EP)
( 5,6,7,8 ) D D DD
(4) G
Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
PARAMETER
CONDITIONS
Drain-Source Voltage
Continuous Drain Current(Note:2)
Pulsed Drain Current(Note:2) Gate-Source Voltage
TC = 25OC TC = 100OC TC = 25OC
Diode Continuous Forward Current(Note:2) Avalanche Current, single pulse (Note:1)
TC = 25OC L=0.5mH
Avalanche Energy, single pulse (Note:1)
L=0.5mH
Features
- s.
- -30V/-40A RDS(ON) = 6.1mΩ (max. ) @ VGS= -10V RDS(ON) = 11mΩ (max. ) @ VGS= -4.5V.
- HBM ESD protection level pass 8KV.
- 100% UIS+Rg tested.
- Reliable and Rugged.
- Lead free and green device available
(RoHS compliant). Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
MSG061P03G Datasheet
