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TAN350 - Pulsed

Description

The TAN 350 is a high power COMMON BASE bipolar transistor.

It is designed for pulsed systems in the frequency band 960-1215 MHz.

The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

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Datasheet Details

Part number TAN350
Manufacturer CHz Tech
File Size 150.09 KB
Description Pulsed
Datasheet download datasheet TAN350 Datasheet

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Full PDF Text Transcription

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R.-.101199 TAN 350 350 Watts, 50 Volts, Pulsed Avionics 960 – 1215 MHz GENERAL DESCRIPTION The TAN 350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55ST Style 1 ABSOLUTE MAXIMUM RATINGS Power Dissipation www.DataSheet4U.com 1450 Device Dissipation @25!C (Pd) Voltage and Current 65 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 2.
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