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CEU71A3 - N-Channel MOSFET

Features

  • 30V , 65A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-252 & TO-251 package. D 6 G D G S G D S CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) S.

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Datasheet Details

Part number CEU71A3
Manufacturer CET
File Size 60.96 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU71A3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CED71A3/CEU71A3 Dec. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 65A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-252 & TO-251 package. D 6 G D G S G D S CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C Ć20 65 100 65 69 0.
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