CET6601 - P-Channel MOSFET

Datasheet Details

-60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 G S.

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Published: Oct 2, 2015 |