CEF35P10 - P-Channel MOSFET

CET

Datasheet Details

-100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S.

📁 CEF35P10 Similar Datasheet

CEF04N6 - N-Channel MOSFET (Chino-Excel Technology)
CEF09N6 - N-Channel MOSFET (Chino-Excel Technology)
CEF740A - N-Channel MOSFET (Chino-Excel Technology)
CEFA101 - SMD Efficient Fast Recovery Rectifier (Comchip Technology)
CEFA101-G - (CEFA101-G - CEFA105-G) SMD Efficient Fast Recovery Rectifier (Comchip Technology)
CEFA101-HF - SMD Efficiency Fast Recovery Rectifiers (Comchip)
CEFA102 - SMD Efficient Fast Recovery Rectifier (Comchip Technology)
CEFA102-G - (CEFA101-G - CEFA105-G) SMD Efficient Fast Recovery Rectifier (Comchip Technology)

Other Datasheets by CET

Published: Oct 2, 2015 |