Type CEP04N7G CEB04N7G CEF04N7G
VDSS 700V 700V
700V
RDS(ON) 3.3Ω 3.3Ω
3.3Ω
ID 4A 4A 4A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CEP04N7G/CEB04N7G CEF04N7G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP04N7G CEB04N7G CEF04N7G
VDSS 700V 700V
700V
RDS(ON) 3.3Ω 3.3Ω
3.3Ω
ID 4A 4A 4A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
700
±30
4 16 84
0.67
4d 16 d 35
0.
CEB04N7G Datasheet
