NE680 NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

Description

NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR .
The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications.

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Datasheet Specifications

Part number: NE680
Manufacturer: CEL
File Size: 1.36 MB
Datasheet: NE680-CEL.pdf
Description: NPN SILICON HIGH FREQUENCY TRANSISTOR

Features

* HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
* LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz
* HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz

Applications

* Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the

NE680 Distributors

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NE680 NPN SILICON HIGH FREQUENCY TRANSISTOR CEL

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