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NE4210S01 - X to Ku BAND SUPER LOW NOISE AMPLIFIER

Description

The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

excellent low noise and associated gain make it suitable for DBS and another commercial systems.

Features

  • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz.
  • Gate Length: Lg ≤ 0.20 µm.
  • Gate Width : Wg = 160 µm.

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Datasheet Details

Part number NE4210S01
Manufacturer CEL
File Size 1.36 MB
Description X to Ku BAND SUPER LOW NOISE AMPLIFIER
Datasheet download datasheet NE4210S01 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Drop-In DISReplacement: CONTICE3512K2 NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Marking NE4210S01-T1 L NE4210S01-T1B Supplying Form Tape & reel 1 kp/reel Tape & reel 4 kp/reel Remark To order evaluation samples, please contact your nearby sales office.
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