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C44C11 - NPN SILICON EPITAXIAL POWER TRANSISTORS

Download the C44C11 datasheet PDF (C44C8 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn silicon epitaxial power transistors.

Description

Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak Base Current Continuous Power Dissipation TA=25ºC TC=25ºC Operating & Storage Junction Temperature Range SYMBOL VCES VCEO VEBO IC ICM IB PD Tj, Tstg C44C8 C44C11 70 90 60 80 5 4

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Note: The manufacturer provides a single datasheet file (C44C8-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C44C11
Manufacturer CDIL
File Size 96.35 KB
Description NPN SILICON EPITAXIAL POWER TRANSISTORS
Datasheet download datasheet C44C11 Datasheet

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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTORS C44C8, C44C11 TO - 220 Plastic Package Medium Power Switching and Amplifier Applications Complementary C45C Series ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak * Base Current Continuous Power Dissipation TA=25ºC TC=25ºC Operating & Storage Junction Temperature Range SYMBOL VCES VCEO VEBO IC ICM IB PD Tj, Tstg C44C8 C44C11 70 90 60 80 5 4 6 2 1.67 30 -55 to +150 Thermal Resistance Junction to Ambient Junction to Case Rth (j-a) Rth (j-c) 75 4.
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