Datasheet4U Logo Datasheet4U.com

BZX79C16 - SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES

Download the BZX79C16 datasheet PDF. This datasheet also covers the BZX79C2V4 variant, as both devices belong to the same silicon glass passivated 0.5watt zener diodes family and are provided as variant models within a single manufacturer datasheet.

Description

SYMBOL VALUE UNIT PD 500 mW Power Dissipation PDS 5.0 W Surge Power Dissipation @ tp=83ms Tj, Tstg -65 to +200 deg C Operating & Storage Junction Temperature Range Rth(j-a) 300 deg C/W Thermal Resistance Junction to Ambient (1) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) VF 1

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BZX79C2V4-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BZX79C16
Manufacturer CDIL
File Size 161.53 KB
Description SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
Datasheet download datasheet BZX79C16 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BZX79C16 Zener Diodes ON Semiconductor
BZX79C16 VOLTAGE REGULATOR DIODE Seme LAB
BZX79C16 Zener Diode Taiwan Semiconductor
BZX79C16 ZENER DIODES SYNSEMI
BZX79C16 Zener Diodes Fairchild Semiconductor

Other Datasheets by CDIL

Part Number Description
BZX79C10 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C11 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C12 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C13 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C15 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES

Full PDF Text Transcription

Click to expand full text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES BZX79C 2V4 to 51V DO-35 500mW These Zeners Are Best Suited for Industrial Purpose, Military & Space Applications when Hermetcally Sealed in Glass with Double Stud This Glass Passivated Chip Provides Excellent Stability & Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VALUE UNIT PD 500 mW Power Dissipation PDS 5.0 W Surge Power Dissipation @ tp=83ms Tj, Tstg -65 to +200 deg C Operating & Storage Junction Temperature Range Rth(j-a) 300 deg C/W Thermal Resistance Junction to Ambient (1) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) VF 1.
Published: |