The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN BC636, 638, 640 PNP
TO-92 Plastic Package
For Lead Free Parts, Device Part # will be Prefixed with "T"
ECB
High Current Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range
VCEO VCBO VEBO
IC PD
**PD PD
Tj, Tstg
THERMAL RESISTANCE Junction to Case Junction to Ambient in free air
Junction to Ambient
Rth (j-c) Rth (j-a) **Rth (j-a)
BC635