Datasheet4U Logo Datasheet4U.com

BC638 - SILICON PLANAR EPITAXIAL TRANSISTORS

Download the BC638 datasheet PDF. This datasheet also covers the BC635 variant, as both devices belong to the same silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

Description

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BC635-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BC638
Manufacturer CDIL
File Size 109.48 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC638 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" ECB High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD **PD PD Tj, Tstg THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Junction to Ambient Rth (j-c) Rth (j-a) **Rth (j-a) BC635
Published: |