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SI2310 - N-Channel Power MOSFET

Features

  • Simple Drive Requirement.
  • Small Package Outline.
  • Surface Mount Device Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous TA=25℃ TA=70℃ Pulsed Drain Current.
  • Power Dissipation.
  • Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range.
  • 2.Pulse width ≤300us , duty cycle≤ 2% Symbol VDS VGS ID IDM PD RthJA Tj. Tstg Rating 60 ±20 3 2.3 10 1.25 100 -55 to 150 Unit V V A W ℃/W ℃.

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Datasheet Details

Part number SI2310
Manufacturer CCSemi
File Size 572.13 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SI2310 Datasheet

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Full PDF Text Transcription

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MOSFET N-Channel Power MOSFET SI2310 Features ◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous TA=25℃ TA=70℃ Pulsed Drain Current * Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range * 2.Pulse width ≤300us , duty cycle≤ 2% Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 60 ±20 3 2.3 10 1.25 100 -55 to 150 Unit V V A W ℃/W ℃ www.canctech.com Revision 2016/8/15 @2016-2017 CCSemi .
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