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CSD30N210 - N-Channel Trench Power MOSFET

Description

The CSD30N210 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a wide variety of applications.

Features

  • VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number CSD30N210
Manufacturer CASS
File Size 796.62 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSD30N210 Datasheet

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Full PDF Text Transcription

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N-Channel Trench Power MOSFET CSD30N210 General Description The CSD30N210 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking and pin Assignment TO-252(DPAK) top view Package Marking and Ordering Information Device Marking Device Device Package CSD30N210 CSD30N210 TO-252 Reel Size 325mm Tape width 16mm Quantity 2500 Table 1.
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