A1SHB - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin assignment.

Bruckewell

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Datasheet Details

Part number	A1SHB
Manufacturer	Bruckewell
File Size	385.32 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	A1SHB Datasheet
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Full PDF Text Transcription

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.

Published: Jan 2, 2017 |