MSU4N60

The MSU4N60 is 600V N-Channel MOSFET designed by Bruckewell Technology.

Product Overview

Bruckewell Technology

Datasheet Details

Part number	MSU4N60
Manufacturer	Bruckewell Technology
File Size	684.58 KB
Description	600V N-Channel MOSFET
Datasheet	MSU4N60-BruckewellTechnology.pdf
Additional preview pages of the MSU4N60 datasheet.

Product details

Description

The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant / Halogen free package available 1.Gate 2. Drain 3. Source Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) Value 600 ±30 4.5 2.6 18 33 4.0 10 4.5 300 Units V V A A A mJ A mJ V/ns °C IDM EAS IAR EAR dv/dt TL Drain Current Pulsed Single.

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Other Datasheets by Bruckewell Technology

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Published: May 26, 2014 |