BS616UV1010 - Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit

Brilliance Semiconductor

BS616UV1010 Description

BSI * .
The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide.

BS616UV1010 Features

* Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010

📥 Download Datasheet

BS616UV1010 Datasheet Preview — Preview of BS616UV1010 PDF

Datasheet Details

Part number: BS616UV1010
Manufacturer: Brilliance Semiconductor
File Size: 216.22 KB
Datasheet: BS616UV1010_BrillianceSemiconductor.pdf
Description: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit

📁 Related Datasheet

BS616LV4017 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit (BSI)
BS600 - Water Bath Instruction Manual (Yamato)
BS6004 - PVC Cable (Linnet)
BS62LV1605 - Very Low Power/Voltage CMOS SRAM 2M X 8 bit (Brilliance)
BS62LV4007 - Very Low Power/Voltage CMOS SRAM 512K X 8 bit (BSI)
BS62LV8006 - Very Low Power/Voltage CMOS SRAM 1M X 8 bit (Brilliance)
BS62UV1027 - Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit (Brilliance)
BS660 - Water Bath Instruction Manual (Yamato)

📌 All Tags

Ultra Low Power Voltage CMOS SRAM 64K bit Brilliance Semiconductor

Brilliance Semiconductor BS616UV1010-like datasheet

BS616UV1610 - Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616UV1620 - Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616UV2011 - Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616UV2021 - Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616UV4010 - Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616UV4020 - Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable