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BUV47, BUV47A NPN SILICON POWER TRANSISTORS
● ● ●
Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability
B
SOT-93 PACKAGE (TOP VIEW) 1
C
2
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING Collector-emitter voltage (VBE = -2.5 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%.
BU47 Datasheet
