Datasheet Details
Part number:
BF92N60L, BF92N60
Manufacturer:
BYD
File Size:
275.98 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: BF92N60L, BF92N60.
Please refer to the document for exact specifications by model.
BF92N60L, BF92N60, N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Th
BF92N60L Features
* z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.5pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL Drain-Source Voltage Drain Current(continuous)at Tc=25°C Drain Current (pulsed) (Note1) Gate-Source Volta
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