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BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCP120C Description

BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micr.

BCP120C Features

* 30.5 dBm Typical Output Power
* 11 dB Typical Gain @ 12 GHz

BCP120C Applications

* where high-gain and medium power in the DC to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP120C is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. PRODUCT F

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Datasheet Details

Part number
BCP120C
Manufacturer
BEREX
File Size
354.60 KB
Datasheet
BCP120C-BEREX.pdf
Description
HIGH EFFICIENCY HETEROJUNCTION POWER FET

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HIGH EFFICIENCY HETEROJUNCTION POWER FET BEREX
BEREX BCP120C-like datasheet