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BLV6N60 Datasheet - BELLING

BLV6N60 N-Channel Enhancement Mode Power MOSFET

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source V.

BLV6N60 Datasheet (487.29 KB)

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Datasheet Details

Part number:

BLV6N60

Manufacturer:

BELLING

File Size:

487.29 KB

Description:

N-channel enhancement mode power mosfet.

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BLV6N60 N-Channel Enhancement Mode Power MOSFET BELLING

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