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BLM3407A - P-Channel Enhancement Mode Power MOSFET

Description

The BLM3407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON).

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Datasheet Details

Part number BLM3407A
Manufacturer BELLING
File Size 203.22 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM3407A Datasheet

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Full PDF Text Transcription

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Pb Free Product BLM3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.3A RDS(ON) < 90mΩ @ VGS=-4.
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