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BLM2010E - N-Channel Enhancement Mode Power MOSFET

BELLING

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Datasheet Details

Part number	BLM2010E
Manufacturer	BELLING
File Size	301.62 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	BLM2010E-BELLING.pdf

BLM2010E Product details

Description

The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =7A Typ. RDS(ON)= 16mΩ @ VGS=4.5V Typ. RDS(ON)= 20mΩ @ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram Marking and pin Assignment.

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Published: Feb 25, 2016 |