1N5711 - Schottky Barrier Diodes

Avago

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Datasheet Details

Part number	1N5711
Manufacturer	Avago
File Size	216.30 KB
Description	Schottky Barrier Diodes
Datasheet	1N5711-Avago.pdf

1N5711 Product details

Description

Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage.Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.The 5082-2835 is a passivated Schottky diode in a low cost glass package.It is optimized for low turn-on voltage.The 5082-283

Features

Low Turn-On Voltage As Low as 0.34 V at 1 mA.
Pico Second Switching Speed.
High Breakdown Voltage Up to 70 V.
Matched Characteristics Available Outline 15 0.41 (.016).
0.36 (.014) Maximum Ratings Junction Operating and Storage Temperature Range 1N5711, 1N5712, 5082-2800/10/11 -65°C to +200°C 5082-2835 -60°C to +150°C DC Power Dissipation (Measured in an infinite heat sink at TCASE = 25°C) Derate linearly to zero at maximum rated temp. 1N5711,.

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Published: Oct 14, 2014 |