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AS4SD4M16 - 4 Meg x 16 SDRAM Synchronous DRAM Memory

Description

The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits.

It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

Features

  • www. DataSheet4U. com AS4SD4M16 PIN.

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Datasheet Details

Part number AS4SD4M16
Manufacturer Austin Semiconductor
File Size 772.27 KB
Description 4 Meg x 16 SDRAM Synchronous DRAM Memory
Datasheet download datasheet AS4SD4M16 Datasheet
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SDRAM Austin Semiconductor, Inc. 4 Meg x 16 SDRAM Synchronous DRAM Memory FEATURES • • • • • • • • • • • • • www.DataSheet4U.com AS4SD4M16 PIN ASSIGNMENT (Top View) 54-Pin TSOP Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable burst lengths: 1, 2, 4, 8 or full page Auto Precharge and Auto Refresh Modes Self Refresh Mode (Industrial, -40°C to 85° C only) 4,096-cycle refresh LVTTL-compatible inputs and outputs Single +3.3V ±0.
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