AS4DDR32M16 - 8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS

Austin Semiconductor

Datasheet Details

Part number	AS4DDR32M16
Manufacturer	Austin Semiconductor
File Size	7.57 MB
Description	8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS
Datasheet	AS4DDR32M16_AustinSemiconductor.pdf

The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits.

VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V.
Bidirectional data strobe (DQS) transmitted/received with data, i. e. , source-synchronous data capture (has two.
one per byte).
Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle.
Differential clock inputs (CK and CK#).
Commands entered on each positive CK edge.
DQS edge-aligned with data for READs; center-aligned with data for WRITEs.
DLL to alig.

📁 AS4DDR32M16 Similar Datasheet

Other Datasheets by Austin Semiconductor

AS4DDR32M72PBG - 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR32M72PBG1 - 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR16M72PBG - 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR232M72PBG - 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M64PBG1 - 64Mx64 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1 - 64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit

Published: Sep 26, 2009 |