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HMC637BPM5E 1W Power Amplifier

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Description

Data Sheet GaAs, pHEMT, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E .
The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT),.

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Features

* P1dB output power: 28 dBm typical Gain: 15.5 dB typical Output IP3: 39 dBm typical Self biased at VDD = 12 V at 345 mA typical Optional bias control on VGG1 for IDQ adjustment Optional bias control on VGG2 for IP2 and IP3 optimization 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25

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